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. 2021 Feb 19;118(8):e2013386118. doi: 10.1073/pnas.2013386118

Fig. 2.

Fig. 2.

Spontaneous Hall effect of Ce3Bi4Pd3. (A) Temperature-dependent direct current (DC) Hall resistivity ρxy in zero external magnetic field, showing a pronounced spontaneous Hall effect below 3 K. Data were taken without prior application of magnetic fields. (B) Spontaneous DC Hall conductivity σxy in units of the 3D conductivity quantum vs. longitudinal conductivity σxx, with temperature as implicit parameter, for the DC response of the sample in A (bottom and left axes, black) and for the 1ω response in an AC experiment on a sample from a different batch (top and right axes, red), both in zero magnetic field. In the Kondo coherent regime (gray shading), σxy is linear in σxx. (C) Temperature-dependent nuclear and electronic contributions to the muon spin relaxation rate obtained from ZF μSR measurements. The electronic contribution is extremely small and temperature-independent within the error bars, ruling out TRS breaking with state-of-the-art accuracy. Magnetization and specific heat measurements corroborate this finding (see SI Appendix, sections II B and C and Figs. S11 and S12. (D) Scaled 2ω spontaneous Hall voltage vs. square of 1ω driving electrical current in zero magnetic field for different temperatures and at 1.7 K for various magnetic fields. (E) Quantities analogous to D for the 0ω spontaneous Hall voltage. (F) Scaled coefficients of square-in-current response α2ω,0ω,DC from D and E and SI Appendix, Fig. S6, respectively (left axis) and linear-in-current response ρxy1ω,DC from B (right axis), as function of scaled temperature (TH is the onset temperature of the spontaneous Hall signal). The absolute values of αmax,i, ρxymax,i, and TH are listed in SI Appendix, Table S1.