Figure 6.
(left) Hecht curve of the GaAs:Cr (2017) sensor using molybdenum fluorescence photons with an energy of 17.4 keV. The data was fitted with equation 1 (red solid line). The mean (μ·τ)e is (4.730 ± 0.003) × 10–4 cm2/V and the charge collection efficiency (CCE) at –300 V is 98.2%. (middle) Spatial distribution and (right) histogram of (μ·τ)e product of the whole sensor: From the distribution of (μ·τ)e values, extracted on a pixel-by-pixel basis, a mean value of (4.640 ± 0.002) × 10–4 cm2/V with a dispersion of 12.7%. (The white squares in the map indicate pixel clusters which were masked due to too high noise and/or a pedestal value beyond limit).