Table 3.
Summary of the characterization results from the GaAs:Cr sensors based on LEC-grown wafers from different suppliers. The measurements have been performed under their standard operating parameters of T = +15 °C and a sensor bias voltage of USensor = −300 V.
| GaAs:Cr (2017) (Vendor #2) | GaAs:Cr (2016) (Vendor #1) | |
|---|---|---|
| Dark Current Through Bulk | 13.38 µA | 25.12 µA |
| Resistivity | 1.69 × 109 Ω/cm (±17.3% r.m.s.) |
0.85 × 109 Ω/cm (±15.1% r.m.s.) |
| Noise (e− ENC, r.m.s) (at tint = 5 μs) | (101.65 ± 0.04) e− ENC (±9.4% r.m.s.) |
(115.93 ± 0.03) e− ENC (±5.5% r.m.s.) |
| FWHM (60 keV) | 2.58 keV or 4.3% | 4.14 keV or 6.9% |
| (µ·τ) e (by Hecht) | (4.730 ± 0.003) × 10−4 cm2/V | (1.831 ± 0.002) × 10−4 cm2/V |
| CCE at U HV,Sensor = −300 V | 98.2% | 96.0% |
| Hole Lifetime τh | 2.5 ns | 1.4 ns |