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. 2021 Mar 3;11:5075. doi: 10.1038/s41598-021-84376-6

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Photopolymerization of the sol–gel precursor thin film under DUV irradiation followed by FTIR (C=C conversion calculated from the decrease of the 1638 cm⁻¹ band). Thickness 450 ± 20 nm, irradiation with LC8 lamp (70 mW/cm²), no MNP. (a) Influence of the Ti complex concentration on the photopolymerization kinetic (Si/Ti = 3/1 to 20/1). (b) Comparison of Ti and Zr complexes (Si/Zr or Ti = 6/1). (c) Influence of the ligands in the Ti complex (Si/Ti = 6/1). (d) Simplified mechanism for a free radical photopolymerization mechanism of the organic part of the hybrid sol–gel precursor.