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. 2021 Jan 21;77(Pt 1):68–82. doi: 10.1107/S205252062001584X

Table 4. Rietveld refinement of NaOnBu and NaOnAm in P4/nmm and P Inline graphic21 m under identical conditions, with restraints on the C and H atoms.

N(param) is the number of structural parameters, including the occupancy parameter.

  NaOnBu NaOnAm
  P4/nmm P Inline graphic21 m P4/nmm P Inline graphic21 m
R wp (%) 4.620 4.884 5.403 5.762
R wp′ (%) 18.52 19.30 15.87 17.03
R p (%) 3.578 3.766 3.875 4.071
R p′ (%) 18.73 19.11 12.44 13.13
Goodness-of-fit [S] 1.924 2.032 1.974 2.106
N(param) 23 23 28 28