. 2021 Feb 1;54(Pt 1):280–286. doi: 10.1107/S1600576720015885

Table 4. The 〈ρ*〉 formal dislocation-density values obtained for the E110G samples irradiated with fluences 1.99 × 10²⁴ nm⁻² (low fluence) and 3.2 × 10²⁴ nm⁻² (high fluence).

Values obtained from the v ₂(q) and v ₄(q) restricted moments are given.

〈ρ*〉 (10¹⁴ m⁻²)	v ₂ (0002)	v ₄ (0002)	v ₂	v ₄
Low fluence	14	13	29	26
High fluence	6.8	6.5	15	11

Table 4. The 〈ρ*〉 formal dislocation-density values obtained for the E110G samples irradiated with fluences 1.99 × 1024 nm−2 (low fluence) and 3.2 × 1024 nm−2 (high fluence).