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. 2021 Mar 2;6(10):6643–6653. doi: 10.1021/acsomega.0c05421

Figure 3.

Figure 3

Electrical characterization of pristine, APTES-functionalized, and influenza A (H1N1) HA polyclonal antibody-immobilized MXene. (A) Diagram of the VSTM. (B) IDS–VDS output curves of the antibody-conjugated FET with various gating voltages. (C) IDS–VDS characteristics of the FET device of each modification process. (D) Measurement of transfer curves of the FET sensor in steps of antibody conjugation (VDS = 2 V). (E) IDS–VG curves for different concentrations of inactivated influenza A (H1N1) virus. (F) Normalized gate-voltage shift and drain-source current change vs concentration of inactivated influenza A (H1N1) virus. The unit for voltage change is V and the unit for current change is μA. Errors bars for the eight tested sensors are given in terms of STDs ranging from ±0.007 to ±0.016 for the normalized neutral gate-voltage shift and from ±0.009 to ±0.014 for the normalized drain-source current change.