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. 2021 Mar 12;12:1641. doi: 10.1038/s41467-021-21792-2

Fig. 2. Thermoelectric origin of the photocurrent in TBG.

Fig. 2

ac Gate voltage dependence of the photocurrent (IPC) at ω = 900 cm−1 and T=300K. Gate voltage is indicated above each panel. d Calculated photocurrent pattern using the Shockley–Ramo formalism24 with material parameters corresponding to VG=+14V (more details in Supplementary Note 3). The top-right inset shows the calculated image of dIPC/dx (compare with Fig. 1(d)).