Fig. 3. Material and electronic characterization of MAPbI3 crystals.
a X-ray rocking curves for MAPbI3 single crystals grown w/o and with DPSI, and the statistical FWHM results are shown as the insert. b Trap density profiled by DLCP for the crystals at different profiling distance from top surface. c Noise current of the crystal grown with DPSI. d, e Time of flight transient currents of the crystals grown w/o and with DPSI. f Photoconductivity comparison of the crystal w/o and with DPSI under weak ambient light intensity of 1 × 10−4 W cm−2.