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. 2021 Mar 17;7(12):eabd9117. doi: 10.1126/sciadv.abd9117

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Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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Fig. 2 — (A) The TENG output voltage (V_TENG) versus displacement (D). Inset: Equivalent circuit diagram for V_TENG characterization. (B) Transfer curves (I_D versus D) in the dark and under different green light power intensity (P_LED). (C) Working mechanism of the mechano-optoelectronic transistor based on Gr/MoS₂ heterostructure. Schematic illustrations of the working principles and the corresponding energy band diagram at (i) initial flat-band state, (ii) separation state (D+), and (iii) contact state (D−).