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. 2021 Mar 5;6(10):7034–7046. doi: 10.1021/acsomega.0c06321

Figure 1.

Figure 1

Etching of Au@SiO2 NRs with and without CTAB in the mesopores (a–d) Schematic representation and corresponding TEM images of the etching process of the Au@SiO2 NRs with CTAB (a, b) and without CTAB (c, d) in the mesopores after 10 and 25 min of etching in methanol containing 0.24 M HCl and 50 mM H2O2. (e) Extinction spectra of the Au@SiO2 NRs in MeOH during etching with 50 mM H2O2 and 0.24 M HCl. (f) LSPR peak position during etching with 0 mM HCl and 0 mM H2O2 (brown) and 0, 20, 50, and 100 mM H2O2 with 0.24 M HCl in MeOH at 60 °C. (g) LSPR peak position during etching at 50, 60, and 70 °C with [H2O2] = 50 mM. The data in (b, e–g) were acquired for the etching process of the Au@SiO2 NRs with CTAB in the mesopores.