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. Author manuscript; available in PMC: 2022 Mar 1.
Published in final edited form as: IEEE Electron Device Lett. 2021 Feb 1;42(3):367–370. doi: 10.1109/led.2021.3055787

Fig. 2.

Fig. 2.

Performance of PIP CNT-TFTs (VDS = −0.1V). a) Transfer curves of in-place versus externally rinsed s-CNT films. b) Subthreshold curves of devices with ion gels printed at 80°C and 20°C. c) Image of an array of in-place printed CNT-TFTs. d) Subthreshold curves of devices under various radii of applied bending. All devices have LCh = 100 μm and WCh = 300 μm.