Table 5.
Supplementary results contributing to the parameter study
| Broadcom AFBR-S4N44P643S | ||||
|---|---|---|---|---|
| CRT (FWHM) | CRT (FWHM) | gaussexc | dE/E | |
| Threshold vth_t1 | ||||
| 10 | 240.2±2.9 ps | 449.7 ps | 2.68% | 9.37±0.08% |
| 20 | 232.6±2.8 ps | 437.4 ps | 3.15% | 9.38±0.08% |
| 30 | 223.5±2.7 ps | 426.9 ps | 4.78% | 9.65±0.09% |
| 40 | 220.1±2.6 ps | 419.1 ps | 4.45% | 9.40±0.08% |
| 50 | 216.1±2.6 ps | 413.3 ps | 4.92% | 9.46±0.09% |
| Segmentation layer | ||||
| BaSO4 (110 µm) | 216.1±2.6 ps | 582.0 ps | 4.23% | 9.46±0.09% |
| ESR (67 µm, glued) | 293.6±2.6 ps | 413.3 ps | 4.92% | 11.64±0.08% |
Table reports the lowest CRT achieved with the corresponding settings and materials used and the CRT (FWTM), Gaussian excess factors and energy resolution at the selected operation point. Data were acquired with two Broadcom AFBR-S4N44P643S SiPM array, where only 16 channels per array were read out. If not indicated differently, data were acquired at vth_t1=50, vth_t2=20, vth_e=15, with 110 µm BaSO4 for scintillator segmentation, a scintillator height of 12 mm, and at a distance of 58 mm. The overvoltage setting varies according to the parameter setting used