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. Author manuscript; available in PMC: 2021 Mar 26.
Published in final edited form as: MRS Commun. 2019 Sep 20;9(4):1186–1192. doi: 10.1557/mrc.2019.129

Fig. 1.

Fig. 1.

Fabrication of piezoelectric cantilevers. (a) Ti/Pt bottom electrodes and contact pads were deposited on an SOI wafer with insulation layers on the front and backside and patterned via liftoff. (b) Piezoelectric AlN was reactively sputtered and patterned via liftoff. (c) Top metal electrodes and contact pads were deposited and patterned via liftoff. (d) Top insulation layer (ONO) was deposited via PECVD. (e) The insulation layer was patterned by RIE. (f) The front and backside were etched via DRIE to define and release the cantilevers, followed by an HF dip to remove the buried oxide layer.