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. 2020 Feb 26;12(11):12998–13004. doi: 10.1021/acsami.0c00348

Figure 1.

Figure 1

(a) Atom arrangement in GeAs layers. (b) Raman spectrum of a GeAs flake. (c) Optical image of the Hall bar device with Ni/Au electrodes. (d) Four-probe measurement setup.