CBN	Cubic boron nitride
CD	Crystal diamond
CSGW	Cutting surface of gringing wheel
ECDGW-AC	Electrochemical dressing of suparhard grinding wheels using alternating current
SD	Synthetic diamond
ES	Electrolyte solution of specially selected chemical compounds
a	Depth of grinding, mm
D	Grinding wheel external diameter, mm
DGW	Equivalent grinding wheel diameter, mm
E	Total overpotential, V
HN	Kinematic cutting edges, µm
k	Coefficient of “simulation of the grinding process”
kv	Coefficient of electrochemical workability of the grinding wheel components, mm3A−1mm−1
le	Distance between electrodes, mm
LN	Distance between kinematic edges, mm
Re	Resistance of electrolyte, Ω
RGW	Resistance of grinding wheel, Ω
S	Thickness of inter-electrode gap, mm
∑SN	Static cutting edges, mm−1
SGW	Surface of grinding wheel
ti	Time of start of digestion process, min
to	Actual time of dressing, min
toe	Effective time of dressing, min
TN	Average maximum thickness of a chip, µm
$T_n$	Time of dressing needed for the removal of the grinding wheel layer, min
Ue	Effective value voltage of the inter-electrode gap, V
Vdig	Speed of digestion, mms−1
Vf	Speed of longitudinal feed, ms−1
VGW	Speed of grinding wheel, ms−1
$\overline{Z}$	Average depth of deposition of the static edges, µm
χ	Specific conductance of the electrolyte, Sm−1
ε	Face run-out, µm
ΔH	Thickness of the grinding wheel layer removed in the ECDGW-AC process, µm.