Fig. 3.

Simulated SPEL rate versus injection current density per unit diode width for the color center located near the SiO₂/4H-SiC interface in the n⁻-type region at a distance of 3 μm from the p⁺–n⁻ junction and 10 nm from SiO₂/4H-SiC interface for different surface recombination velocities S at the SiO₂/4H-SiC interface. The electron capture cross section by a neutrally charged color center c_n⁰ is equal to 7.2 × 10⁻⁹ cm³ s⁻¹