Fig. 3.

(a) Coulombic efficiency of the Zn plating/stripping at 1 mA cm⁻² with the capacity of 1 mAh cm⁻². b Coulombic efficiencies of the Zn plating/stripping at 2 mA cm⁻² with the capacity of 1, 2, 3 and 4 mAh cm⁻². c Coulombic efficiencies of the Zn plating/stripping at 4 mA cm⁻² with the capacity of 1 mAh cm⁻². d-f Long-term galvanostatic cycling of Zn-Zn symmetrical cell at 1, 2 and 4 mA cm⁻² with the capacity of 1 mAh cm⁻²