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. 2020 Apr 8;20(5):2914–2920. doi: 10.1021/acs.cgd.9b01312

Figure 1.

Figure 1

(a) Morphological evolution as a function of patterning (pillar size W and gap G) and deposition rate in 5 μm tall Si microcrystals, grown at 700 °C. (b) Schematic representation of the variation in the top morphology as a function of the size l of the (001) top facet (for a given diffusion length λ) determined by the material transfer J from the (113) to the (001) facet. The effect of a lower growth rate Φ, i.e. of longer λ, is also sketched.