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. 2021 Apr 2;10:72. doi: 10.1038/s41377-021-00500-1

Table 1.

Decay lifetimes of interlayer excitons in various TMD vdW heterostructures

HSs Fabrication method Twist angle (°) Lifetime (ns) Temp (K) Technique Notes Refs.
τ1 τ2 τ3
MoSe2/WSe2 MEwet transfer 1.80 20 TRPL 22
MEdry transfer 0 ~10 30 TRPL 33
MEdry transfer 16 138 4.5 TRPL 28
MEdry transfer 54 40 >100 4 TRPL B = 0 T 25
54 70 >200 4 TRPL B = 28 T
MEdry transfer 0/60 10 100 4 TRPL EHS = 0 V/nm 30
0/60 600 4 TRPL EHS > 0.1 V/nm
MEdry transfer 60 ~50 ~100 3 TRPL 23
MEdry transfer 0/60 ~1000 TRPL Dark exciton 27
MEdry transfer 58.7 2.30 TRPL 135
MEdry transfer 60 ~12 4 TRPL Moiré interlayer exciton 142
MEdry transfer 3.5 100 TRPL Moiré period (5 nm) 162
MEdry transfer 1.1 1.00 TRPL Moiré period (17 nm)
CVD 0 1.20 5.50 TRPL No moiré pattern
CVD 60 6.00 44 877 4.2 TRPL No moiré pattern 111
WS2/WSe2 CVD 0, 60 0.97 295 Pump-probe Hole dynamics (WSe2) 91
0, 60 4.10 78 Pump-probe Hole dynamics (WSe2)
WS2/WSe2 CVD 0 0.36 295 Pump-probe Electron dynamics (WS2) 91
60 0.98 295 Pump-probe Electron dynamics (WS2)
WS2/WSe2 MEdry transfer 0.41 Pump-probe Electron dynamics (WS2) 160
WS2/hBN/WSe2 MEdry transfer 1.00 Pump-probe Electron dynamics (WS2) 160
WS2/bilayer-hBN/WSe2 MEdry transfer 4.96 Pump-probe Electron dynamics (WS2) 160
WS2/trilayer-hBN/WSe2 MEdry transfer >10 Pump-probe Electron dynamics (WS2) 160
MoS2/WS2 Vertical heteroepitaxial growth Coherent stack 0.04 Pump-probe 42
Manual stacking Random stack 1.50 Pump-probe
hBN/MoS2/WS2/hBN MEdry transfer 0/60 ~100 10 TRPL VG = 0–4.5 V 26
~400 10 TRPL VG = −4.5 V
MoS2/WSe2 MEdry/wet transfer ~0.05 to ~3 Pump-probe Depending on the twist angle 56
MoS2/MoSe2/MoS2 CVDwet transfer 5 135 6 TRPL 24
WSe2/MoSe2/WSe2 MEdry transfer 2.54 4 TRPL Neutral interlayer exciton 161
2.47 40
1.84 80
0.41 120
WSe2/MoSe2/WSe2 MEdry transfer 1.24 4 TRPL Charged interlayer exciton 161
0.47 20

HSs heterostructures, Temp temperature, ME mechanical exfoliation, CVD chemical vapor deposition, TRPL time-resolved photoluminescence spectroscopy, B applied out-of-plane magnetic field, EHS electric field across the heterostructure, VG externally applied voltage, Ref reference