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. 2021 Apr 5;11:7497. doi: 10.1038/s41598-021-87007-2

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© The Author(s) 2021

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Permittivity ε_r at RT of as grown MOVPE SrTiO₃ thin films as a function of the vertical lattice parameter d_⊥. Inset figure shows the MOS-structure used for this measurement composed of SrTiO₃:Nb, MOVPE SrTiO₃ thin film and Pt top contact. Error bars of the permittivity measurement are within the symbol size and results mainly from the uncertainties in contact sizes.