TABLE 1.
Comparison of the presented neuron circuit with neuron circuits reported by other research groups regarding the based device types, number of external bias lines, and components as well as energy consumption.
| Neuron model | Based device (length/width) | Operating mechanism of neuron device | Number of external bias lines | Approximate components | Approximate total energy (J/# of spike) | |
| Indiveri et al. (2006) | Integrate-and-fire | MOSEFT (0.8 μm/0.8 μm) | Field-effect | 7 | 22 transistors, 1 capacitor | 900 × 10–12 (at 200 Hz) |
| Zhang and Wijekoon (2019) | Integrate-and-fire | MOSFET (0.35 μm/0.35 μm) | Field-effect | 5 | 14 transistors, 2 capacitors | 9.0 × 10–12 (at 1 MHz) |
| Kornijcuk et al. (2016) | Integrate-and-fire | Floating-Gate FET | FN tunneling | 4 | 13 transistors, 1 capacitor, | 1.3 × 10–12 (at 23 Hz) |
| Kwon et al. (2018) | Integrate-and-fire | FBFET | Positive feedback | 2 | 9 transistors 1 resistor, 1 capacitor | 8.83 × 10–12 (at 500 kHz) |
| Choi et al. (2018) | Integrate-and-fire | FBFET (1.0μm/0.1 μm) | Positive feedback | 3 | 5 transistors | 0.25 × 10–12 (at 200 Hz) |
| Kim et al. (2019) | Integrate-and-fire | MOSFET (0.4 μm/1 μm) | Schmitt trigger | 2 | 6 transistors 1 capacitor, | 159 × 10–12 (at 1 MHz) |
| Wang and Khan (2019) | Integrate-and-fire | FEFET (0.08 μm/>0.05 μm) | Ferroelectric field-effect | 1 | 2 transistors, 2 diodes,3 capacitors, 4 resistors | 570 × 10–12 (at 40 Hz) |
| Woo et al. (2020) | Integrate-and-fire | FBFET (0.1 μm/–) | Positive feedback | 2 | 4 transistors, 1 capacitor | 2.9 × 10–15 (at 20 kHz) |
| Chavan et al. (2020) | Integrate-and-fire | PDSOI MOSFET (0.04 μm/1 μm) | Band-to-band tunneling | 3 | 6 transistors | 3.2 × 10–15 (at 150 kHz) |
| This work | Integrate-and-fire | p-n-p-n diode (0.05 μm/0.05 μm) | Avalanche breakdown | 0 | 3 transistors, 1 diode, 1 capacitor | 5.94 × 10–16 (at 28.1 kHz) |