Table 2.

Figures of merit for photodetectors with graphene, MoS₂ and h-BN heterostructures

Design	Year	Device Fabrication Approach	Dimension (nm)	Operating Condition $\mathit{\lambda }$ (nm)/VDS (V)	Responsivity (A/W)	On/Off Ratio	Specific Detectivity (Jones)	Ref.
MoS2/graphene	2015	G: ME MoS2: ME	G: 1L MoS2: 3L	520/1.0	$2.06\times {10}^3$	106	$1.5\times {10}^{15}$	[13]
MoS2/h-BN/graphene	2016	G: CVD MoS2: ME h-BN: ME Dry Transfer	G: 1L MoS2: 1L h-BN: 7	405/5	180	105	$2.6\times {10}^{13}$	[47]
MoS2/h-BN/graphene	2016	CVD	G: 9.32 MoS2: 1L h-BN: 20	532/10	$0.3\times {10}^{-3}$	6.6	-	[64]
MoS2/h-BN/graphene	2019	G: CVD MoS2: ME h-BN: ME Dry Transfer	G: 1L MoS2: 28 h-BN: 0.47	532/0	0.36	1000	$6.7\times {10}^{10}$	[10]
Graphene/MoS2/graphene	2019	G: CVD MoS2: CVD	Channel length: 15,000 (Lateral Device)	532/1	2	106	1013	[63]
Graphene/h-BN/MoS2	2020	Dry transfer	G: 1L MoS2: 1L h-BN: 10–25	1550/0.02	More than $1\times {10}^8$	-	-	[30]
Graphene/MoS2/graphene	2020	G:CVD Dry transfer	Channel length: 30 (Lateral Device)	432/0.5	$2.2\times {10}^5$	-	$3.5\times {10}^{13}$	[19]

G = graphene, ME = mechanically exfoliated, 1L = monolayer, 3L = tri-layers.