. 2021 Mar 4;12(9):2464–2470. doi: 10.1021/acs.jpclett.0c03841

Table 2. SiP₃ Monolayer: Deformation Potential Constant (E_DP), In-Plane Stiffness (C), Effective Mass (m*), Carrier Mobility (μ), and Relaxation Time (τ) along the a and b Directions at 300 K.

carrier type	E_DP (eV)	C (J m^–2)	m* (m₀)	μ (cm² V^–1 s^–1)	τ (ps)
electron (a)	1.16	35.95	0.47	2.33 × 10³	0.68
hole (a)	1.68	35.95	5.71	12.39	0.04
electron (b)	3.01	73.71	0.58	575.38	0.21
hole (b)	2.63	73.71	2.58	22.94	0.04

Table 2. SiP3 Monolayer: Deformation Potential Constant (EDP), In-Plane Stiffness (C), Effective Mass (m*), Carrier Mobility (μ), and Relaxation Time (τ) along the a and b Directions at 300 K.