Skip to main content
. 2021 Mar 18;5(4):e10425. doi: 10.1002/jbm4.10425

Table 1.

The Three Steps and Flow Rates of the Different Gases Used for Processing SiON, SiONP1, and SiONP2 Implants

SiH4/Ar (15/85%) PH3/SiH4/Ar (2/15/83%) N2O N2 NH4 Ar Time (s)
Step 1 0 0 0 0 0 250 30
Step 2 (SiONx) 24 0 155 225 50 0 226
Step 2 0 24 225 50 0 322
(SiONPx)1 5
(SiONPx)2 16
Step 3 0 0 0 0 0 250 30

Ar = Argon (carrier gas); N2 = nitrogen; N2O = nitrous oxide; NH4 = ammonia; PH3 = phosphine; SiH4 = silane; SiON = silicon oxynitride; SiONP = silicon oxynitrophosphide.