Table 3. Comparison Table for Cu2FeSnS4.
| positive material//negative material | cell configuration | capacitive retention@CDcycles | electrolyte | specific capacitance@GCD | energy density (W h kg–1) | power density (W kg–1) | ref. |
|---|---|---|---|---|---|---|---|
| CuFeS2//CuFeS2 | symmetric device | 92.03%@3000 | 1 M LiOH | 34.18 F g–1@1 A g–1 | 4.74 | 166 | (39) |
| CuCo2S4/CC//AC | asymmetric solid-state device | 78.4@3000 | PVA/KOH | 166.67 mA h g–1@1 A g–1 | 17.12 | 194.4 | (40) |
| CuS-AC//AC | asymmetric device | 92%@5000 | 6 M KOH | 247 F g–1@0.5 A g–1 | 24.88 | 800 | (41) |
| Cu7Se4–CuxCo1–xSe2 | asymmetric device | 94.1%@5000 | 3 M KOH | 98.6 F g–1@1 A g–1 | 26.84 | 700 | (42) |
| CuS@CD-GOH//GO | asymmetric device | 90%@5000 | 6 M KOH | 920 F g–1@1 A g–1 | 28 | 700 | (43) |
| SnS2/rGO//AC | asymmetric device | 95.1%@5000 | 3 M KOH | 94.5 C g–1@1 A g–1 | 29.06 | 747.32 | (44) |
| CuCo2S4/CuCo2O4//graphene | asymmetric device | 73%@10,000 | 2 M KOH | 90.4 F g–1@1 A g–1 | 33.2 | 800 | (45) |
| Cu2S@CoS2//rGO | asymmetric device | 104.7%@8000 | 2 M KOH | 1007 F g–1@2 A g–1 | 35.4 | 825 | (46) |
| CuS/7% rGO/AC | hybrid device | 94%@2000 | 6 M KOH | 235 C/g@1 A g–1 | 43 | 1426 | (47) |
| Cu2FeSnS4/rGO//AC | hybrid device | 63%@20,000 | 2 M KOH | 234 F g–1@1 A g–1 | 73 | 749 | our work |