Figure 9.

Computed thermoelectric properties of pristine (a) metallic (5,5) and (b) semiconducting (10,0) CNTs and (c) mixed parallel CNT circuits sandwiched between Cu electrodes. (a,b) Conductance (G), Seebeck coefficient (S) and Power Factor per CNT (P) are plotted as a function of doping level (μ) for four different temperatures: 30, 40, 70, and 100 °C. The atomistic side view of the models used for the transport calculations are presented at the top of the figure. C atoms are depicted in grey while Cu atoms are shown in orange. The semi-infinite electrodes consisting of perfect copper are depicted in blue. (c) G, S, P at different temperatures for a pristine CNT film containing 90% of metallic (5,5) and 10% semiconducting (10,0) CNTs with μ = − 0.99 eV computed using CNT bundles model adopted from Hayashi et al.⁶⁵. The 3D visualisation of the model is shown above.