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. 2021 Apr 8;12(4):414. doi: 10.3390/mi12040414

Figure 2.

Figure 2

Simplified manufacturing process flow diagrams of semiflexible DBS device using the trench-based F2R technology versus using cavity-BOX substrate. Left (ad): The SOI based process with sealed trenches on the front side of the wafer and a two-step backside etch process. Right (eg): The cavity-BOX based process using patterned BOX as an etch-stop layer and hard-etch mask. Bottom (h): Finished device.