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. 2021 Mar 6;8(Pt 3):387–394. doi: 10.1107/S2052252521001664

Table 1. Comparisons of the ADPs of Si between the present study and previous reports.

All the values in the table are shown in units of 10−4 Å2, unless stated otherwise. INS and CBED stand for inelastic neutron scattering and convergent-beam electron diffraction, respectively.

Temperature (K) PXRD from OHGI (Present study) PXRD from AVID #1 (Wahlberg et al., 2016) PXRD from AVID #2 (Tolborg et al., 2017 ) INS (Flensburg & Stewart, 1999) CBED (Sang et al., 2010)
100 29.7 (2) 31.81 33.70 34 (2)
300 57.7 (3) 56.20 61.03 59.41 (21) 61 (1)

Standard deviations were not reported.