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. 2021 Apr 30;12:2480. doi: 10.1038/s41467-021-22680-5

Fig. 2. Mimicking STP using an OECT artificial synapse.

Fig. 2

a Patterns of pulsed gate voltage with different parameters; Vp: voltage amplitude, t: pulsed voltage interval time, tp: pulsed voltage duration, Tp: pulsed voltage period. b Channel current modulation induced by 10 consecutive gate voltage pulses in the P-80% PTHF-based OECT. c Transient response of the PEDOT:Tos/PTHF-based OECT with different PTHF blend ratio. All the dashed lines are exponential decay fitting curves. The rise-time of the current pulse when the gate voltage was applied is defined as response time, while the decay-time of the current pulse after the gate voltage was removed is defined as ion relaxation time. The response time of devices with different PTHF blend ratio are τres_0=0.143ms,τres_20=0.269ms,τres_50=0.387ms,τres_80=2.104ms,τres_90=7.113ms. The ion relaxation time of devices with different PTHF blend ratio are τrel_0=0.288ms,τrel_20=0.241ms,τrel_50=0.692ms,τrel_80=2.824ms,τrel_90=5.659ms. d, e Paired-pulse facilitation (PPF) and post-tetanic potentiation (PTP) indexes as a function of OECT channel composition and interval time of gate pulses, under tp of 1 ms. Gray dashed lines are the fitting curves.