Figure 8.

Low‐temperature synthesis of doped and alloyed TMDs. a,b) AFM images demonstrate that Re doped WSe₂ films grown on SiO₂/Si substrates at 450 °C by MOCVD are polycrystalline and have domain sizes about 150–200 nm with an average thickness of 2 nm, corresponding to 3–4 layers. c) Raman spectra of pristine and Re‐doped WSe₂ analyzed by 532 nm excitation wavelength. The intensity of ZA(M) and LA(M) modes around 146 cm⁻¹ in both cases are enhanced as a function of Re concentration. (a‐c): Reproduced with permission.^{[ 96 ]} Copyright 2020, Wiley‐VCH. d) A synthesis flow of super‐cycle ALD for Mo_{1‐ x}W_xO alloy and sulfurization of H₂S for Mo_{1‐ x}W_xS₂. e) XPS measurements for Mo 3d and W 4f core levels in the Mo_{1‐ x}W_xS₂ alloy with different n and m numbers in one super‐cycle. (d‐e): Reproduced under the terms of the CC‐BY 4.0 license.^{[ 121 ]} Copyright 2015, The Authors, published by Springer Nature.