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. 2021 May 12;12:2728. doi: 10.1038/s41467-021-22943-1

Fig. 4. RF Optoelectronic characterization.

Fig. 4

a Maximum photodetected power at VGS = 0V, VDS = 330 mV, as a function of fopt. b PIF/PRF at VGS = 0.6V, VDS = 330 mV. Optical power in a, b is 60 mW.