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. 2021 Apr 26;10:e62639. doi: 10.7554/eLife.62639

Figure 7. Embryonic V1R firing patterns predicted by computational modeling.

(A) Firing patterns of 26 recorded cells, in which both GNap and GKdr were measured. Gray: single spiking (SS); red: repetitive spiking (RS); blue: plateau potential (PP). The three purple points located at the boundary between the RS and PP regions correspond to mixed events (ME), where plateau potentials alternate with spiking episodes. Note that no cell exhibited low values of both GNap and GKdr (lower left) or large values of both conductances (upper right). (B) Bifurcation diagram of the deterministic model when GKdr is kept fixed to 2.5 nS or 10 nS while GNap is varied between 0 and 2.5 nS. Gin = 1 nS and I = 20 pA. For GKdr = 10 nS (i.e., in the top experimental range), the red curves indicate the maximal and minimal voltages achieved on the stable limit cycle associated with repetitive firing (solid lines) and on the unstable limit cycle (dashed lines). The fixed point of the model is indicated by a gray solid line when it corresponds to the stable quiescent state, a gray dashed line when it is unstable, and a solid blue line when it corresponds to a stable plateau potential. The two Hopf bifurcations (HB) corresponding to the change of stability of the quiescence state (HB1, GNap = 0.81 nS) and the voltage plateau (HB2, GNap = 2.13 nS) are indicated, as well as the two saddle node (SN) bifurcations of limit cycles associated with the onset (SN1, GNap= 0.65 nS) and offset (SN2, GNap = 2.42 nS) of repetitive spiking as GNap is increased. For GKdr = 2.5 nS, the model does not display repetitive firing; it possesses a unique fixed point, which is always stable (blue-gray curve). The transition from quiescence to plateau is gradual with no intervening bifurcation. Representative voltage traces of the three different activity patterns are shown: SS in response to a 2 s current pulse (gray, GNap= 0.2 nS, GKdr= 10 nS), RS (red, GNap= 1.2 nS, GKdr= 10 nS), and PP (blue, GNap= 1.2 nS, GKdr= 2.5 nS). Note that the plateau never outlasts the current pulse. (C) Bifurcation diagram when GNap is kept fixed at 1.2 nS and GKdr is varied between 0 and 25 nS (I = 20 pA). Same conventions as in (B). PP is stable until the subcritical HB2 (GKdr = 6.34 nS) is reached, repetitive firing can be observed between SN2 (GKdr = 5.93 nS) and SN1 (GKdr = 22.65 nS). The quiescent state is stable from point HB1 (GKdr= 17.59 nS) onward. (D) Two-parameter bifurcation diagram of the model in the GNap - GKdr plane (I = 20 pA). The black curves indicate the bifurcations HB1 and HB2. The red curves indicate the SN bifurcations of limit cycles SN1 and SN2. The shaded area indicates the region where repetitive firing can occur. The oblique lines through the points labeled 1, 2, and 3, the same as in (B), correspond to three different values of the ratio of GNap / GKdr: 0.02 (gray), 0.12 (red), and 0.48 (blue). Voltage traces on the right display the response to a 2 s current pulse when channel noise is taken into account for the three regimes: SS (top, gray trace and dot in the diagram), RS (middle, red), and PP (bottom, blue). They correspond to the three deterministic voltage traces shown in (B). Note that the one-parameter bifurcation diagrams shown in (B) correspond to horizontal lines through points 1 and 2 (GKdr = 10 nS) and through point 3 (GKdr = 2.5 nS), respectively. The bifurcation diagram in (C) corresponds to a vertical line through points 2 and 3 (GNap = 1.2 nS). (E) Cumulative distribution function of the ratio GNap/GKdr for the four clusters in (A), showing the sequencing SS (gray) → RS (red) → ME (purple, three cells only) → PP (blue) predicted by the two-parameter bifurcation diagram in (D). The wide PP range, as compared to SS and RS, merely comes from the fact that GKdr is small for cells in this cluster. The three colored points indicate the slopes of the oblique lines displayed in (D) . (F) The data points in (A) are superimposed on the two-parameter bifurcation diagram shown in (D), demonstrating a good agreement between our basic model and experimental data (same color code as in A for the different clusters). The bifurcation diagram is simplified compared to (A), only the region where repetitive spiking is possible (i.e., between the lines SN1 and SN2 in A) being displayed (shaded area). Notice that three ME cells (purple dots) are located close to the transition between the RS and PP regions. The four arrows indicate the presumable evolution of GNap and GKdr for SS, RS, ME, and PP cells between E12.5 and E14.5–15.5. GNap eventually decreases while GKdr keeps on increasing. (G) Distribution of a sample of cells in the GNap - GKdr plane at E14.5. All the cells are located well within the SS region far from bifurcation lines because of the decreased GNap compared to E12.5, the increased GKdr, and the shift of the RS region (shaded) due to capacitance increase (18 versus 13 pF).

Figure 7.

Figure 7—figure supplement 1. Effect of IA on embryonic V1R firing patterns predicted by computational modeling.

Figure 7—figure supplement 1.

(A) The maximal conductances of IKdr and IA at E12.5 are linearly correlated. Best fit: GA = 1.09 GKdr (R2 = 0.81, N = 44). (B) Effect of IA on the dynamics of the basic model. The one-parameter bifurcation diagrams in control condition (black, I = 20 pA, GKdr = 10 nS, no IA, same as in Figure 7B) and with IA added (orange, GA = 10 nS) are superimposed. The IA current shifts the firing threshold SN1 to the right by 0.18 nS (see also C) as indicated by the orange arrow, with little effect on the amplitude of action potentials (see also inset in C). In contrast, IA shifts SN2 by only 0.03 nS because it is inactivated by depolarization. (C) IA also slows down the discharge frequency, as shown by comparing the GNapV curves without IA (black) and with IA (orange). For GNap = 1 nS, for instance, the firing frequency is reduced by 31%, from 15 to 10.4 Hz. Here again, the effect of IA progressively decreases as GNap increases because of the membrane depolarization elicited by INap. For GNap = 2.4 nS, for instance, the firing frequency is reduced by 11% only, from 19.1 to 17 Hz. This frequency reduction elicited by IA does not merely result from the increased firing threshold. Note also that the latency of the first spike is increased (see voltage trace in inset), which is a classical effect of IA. (D) IA reduces the frequency of pseudo-plateau bursting by lengthening quiescent episodes (doubling their duration in the example shown) without affecting the duration of plateaus much (here a mere 5% increase), as shown by the comparison of the voltage traces obtained without IA (control, GKdr= 2.5 nS, black) and withIA (GKdr=GA= 2.5 nS, orange). This is because IA is activated near rest but inactivated during voltage plateaus. Note that increasing GKdr in the absence of IA has not the same effect; it shortens both plateaus and quiescent episodes (see Figure 8C, where GKdr= 5 nS). This is because IKdr does not inactivate (or does it only very slowly) in contrast to IA.
Figure 7—figure supplement 2. Explaining the effect of 4-aminopiridine (4-AP) on the firing pattern.

Figure 7—figure supplement 2.

The R region of the basic model, where repetitive firing may occur, is displayed in the GNapGKdr plane in control condition for E12.5 V1R (Cin = 13 pF, Gin = 1 nS, I = 20 pA, shaded area) and when Gin and I were both reduced by 25% (middle curve) or 50% (left curve). The reduced I accounts for the decrease in rheobase, and thus in the current injected in the experiments, following the decrease in Gin. If 4-AP reduced only GKdr (as indicated by the downward arrow), the firing pattern of SS V1R would not change, the RS region being too far to the right to be visited. In contrast, when the effects of 4-AP on the input conductance and rheobase are taken into account, the bifurcation diagram moves leftward and downward, as indicated by the oblique black arrow, and the RS and PP regions are then successively entered as GKdr is reduced. The same explanation holds at E14.5.