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. 2021 Apr 22;11(5):1077. doi: 10.3390/nano11051077

Figure 6.

Figure 6

(a) Hall resistance against magnetic field for Bi2Se3 films with different thicknesses (indicated in QLs on the right part of the plot) showing the non-linear dependence. (b) Carrier densities obtained from the SdH oscillations against thickness. (c) Mobilities obtained from the two-band analysis against thickness. In (b) and (c), the blue circles represent the bulk data (nb, μb) and the red squares represent the surface data (ns, μs), where empty and filled squares represent the two different surfaces. (d) Gs/Gtot against film thickness. (e) 2D Magnetoconductance for different film thicknesses. (f) Value of α against film thickness. Inset in (e) shows schematic energy bands above and below the critical thickness. Data were taken at T=1.6 K. Reprinted with permission from Reference [13]. Copyright 2012 American Physical Society.