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. 2021 Apr 30;11(5):1188. doi: 10.3390/nano11051188

Figure 5.

Figure 5

Electrical current through Metal-ZnO NP-Metal structures as a function of the drain to source voltage applied in (a,b) linear and (c,d) log scale. The gate voltage VG was fixed to 4 V for all the measurements. Al, Au, and Ni were the metals used for drain and source metallization. The red line is a Matlab simulated fitting curve considering the Equations (1)–(3). TFTs with channel lengths of L = 3 μm and 5 μm were evaluated.