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. 2021 Apr 30;11(5):1188. doi: 10.3390/nano11051188

Figure 6.

Figure 6

SBHs and ideality factors as a function of the electric field inside the TFTs channel with L = 3 μm, created by the potential difference between source and drain metals (∆VDS = 1, 2, 5, and 10 V). (a,b) show the Schottky Barrier Height 1 and 2, (d,c) show the ideality factor n1 and n2.