SBHs and ideality factors as a function of the electric field inside the TFTs channel with L = 3 μm, created by the potential difference between source and drain metals (∆VDS = 1, 2, 5, and 10 V). (a,b) show the Schottky Barrier Height 1 and 2, (d,c) show the ideality factor n1 and n2.