Table 2.

Comparison of size and resolution of resulting nanofabricated structures.

Category	DSA of BCPs	ASD of Polymer Brushes	EUV Lithography	Nano-Imprint Lithography	Optical Lithography
Accuracy and Resolution	Needs research and development for: Pattern features control, Defects minimisation [138], Defect mitigation and repair, and techniques [123,124].		Stochastic issues leading to critical dimension variation, critical pattern defects and feature roughness [33,170].	Limited by size of features on mould. high fidelity of pattern transfer [137]. Defect density and mask damage issues [137]. Suitable material for moulds [171,175].	Resolution improvements reaching limits [52,144,154,155].
Size	BCP patterns 5 to 200 nm size range [123] with dot, line hole or lamellar patterns [126]. May improve feature control to sub 7 nm and pitch multiplication [138].	Depends on the chemistry of the end-functional group and polymer deposition technique used.	Main candidate for sub10nm manufacturing [51,170]. 25 nm 1:1 line/space resolution with an approximate 2.7 nm line edge roughness [162].	Allows for patterning features of sub-100 nm possibly with features as small as 10 nm [146,174].	Smallest features approximately equal to wavelength of light used [52]. Wavelength of 193 nm or longer is generally used [144,177].
Predicted or used in HMV in device type	3 nm node logic [16].	unknown	1.5–7 nm node logic [16].	Device type: 3D Flash Memory [16].	Limited by wavelength.