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. 2021 May 3;11(5):1209. doi: 10.3390/nano11051209

Figure 4.

Figure 4

The SEM cross-section images of Sample III after digital etching at 50 cycles with (a) 30% H2O2-dBOE q-ALE and (b) 31.5% HNO3-dBOE q-ALE. (c) SIMS data of boron/arsenic and the Ge/Si mole fraction in Sample III. An abrupt B profile was formed by in situ doped epi, as the profile exhibits a large diffusion into SiGe.