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. 2021 May 3;11(5):1209. doi: 10.3390/nano11051209

Figure 6.

Figure 6

Dependence of the REA and Si loss on the number of etching cycles for SiGe/n+-Si, SiGe/p+-Si, and SiGe/i-Si. The scatters are the experimental data, and the lines are the linear fitting curves of the experimental data. The slopes represent the REPC and silicon etching amounts for each cycle (EPC).