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. 2021 May 11;11(5):1261. doi: 10.3390/nano11051261

Figure 13.

Figure 13

Simulations performed with the Stanford model (including TM6) making use of different thermal capacitances, Cth, assuming a common value of the thermal resistance, Rth = 4 × 105 K/W. (a) Voltage applied to the device versus time, (b) Temperature versus time.