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. 2021 Feb 3;4(2):1048–1056. doi: 10.1021/acsanm.0c02569

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STEM analysis of Ge_1–xSn_x nanowires. (a) STEM image for Ge_1–xSn_x nanowire with high (∼20 atom %) Sn content. The low resolution of the image is associated with the deformation of the Ge_1–xSn_x nanowire by the electron beam. The inset shows low-resolution STEM of the corresponding nanowire. (b) STEM image of the spherical tip after the nanowire growth shows the formation of a predominantly Sn rich part at the tip. (c) High resolution STEM image of Ge_1–xSn_x nanowire with around 10 atom % Sn shows high crystal quality and ⟨111⟩ growth direction.