| grating |
EBL and UV-assisted capillary force lithography |
constant
ridge width (1 μm) and depth (400 nm) and variable
groove widths (1–9.1 μm) |
(160) |
| combination of nanoimprint lithography and photopolymerization |
gradient in pattern height (0–350 nm) |
(174) |
| pillar |
EBL and plasma etching |
pillar height changes from planar to 250 nm over 9 mm |
(161) |
| photolithography and
soft-lithography |
pillar diameter 2 μm, pitch size
5.5 μm and variable
heights between 3.8 and 10.1 μm |
(168) |
| wrinkle |
unidirectional strain during surface oxidation
using shielded plasma oxidation by applying a mask |
W: 464–7121 nm |
(100) |
| A: 49–2561 nm |
| W: 200–1087 nm |
(34) |
| A: 0.1 nm–260 nm |
| W: 0.8–14 μm |
(172) |
| A: 144–3000 nm |
| W: 4–30 μm |
(173) |
| A: 144–3000 nm |
| W: 464–10990 nm |
(171) |
| A: 49–3425 nm |
| W: 1520–9934 nm |
(170) |
| A: 176–2168 nm |
