| pores |
centrifugation |
pore size: 88–405 μm |
(175) |
| pore size: 90–400 μm |
(176) |
| anodic etching and chemical etching |
pore size: 50 nm–3 μm |
(177) |
| electrochemical etching of
silicon wafers in electrolytes
containing hydrofluoric acid (HF) |
pore size: 29–226 nm |
(36) |
| pore size: 5–3000 nm |
(178) |
| pore size: 10–500 nm |
(179) |
| roughness |
annealing
temperature |
roughness: 0.5 to 13 nm |
(180) |
| combination of sand-blasting
and chemical-polishing
technique |
roughness: 0.5–4.7 μm |
(181) |
| roughness: 1.12–5.7 μm |
(182) |
| roughness: 0.87–4.41 μm |
(183) |
| sputter deposition |
roughness: 1–16 nm |
(184) |
| particle |
dip-coating |
maximum particle coverage is 21% corresponding to a mean particle
spacing of 190 nm |
(185) |
| dip-coating |
particle coverage range from 35% to 0,
and particle diameter
was 73 nm |
(186) |
| controlled immersion into the solution of gold
nanoparticles in a time-controlled manner |
root–mean–square
roughness change from 0 to 15
nm, and diameters of nanoparticles are 16, 38, or 68 nm |
(187) |
| roughness: ∼2.5 to 5, and nanoparticles of diameters
of 16, 68 nm |
(188) |
| electrospray |
surface
roughness (root–mean–square value) range
from 80–900 nm, and the average size of the deposited particles
was about 3 μm |
(189) |
