| liquid/liquid and liquid/air interfaces |
glass, Si, TEM grids, semiconductors (GaAs) |
polymers,
metals, oxides, spheres, rods, and platelets, with
sizes of 5 nm to hundreds of microns |
usually close-packed but can control distance with substrate
insertion/removal angle |
up to 2 cm2
|
(16,17,33) |
| dip-coating |
glass, Si |
metal
spheres and semiconductor (QD) spheres, several nm to
microns |
close-packed |
up to 2 in. wafers |
(18−20) |
| Langmuir–Blodgett |
glass, Si |
SiO2, polymer spheres, hundreds
of nanometers to
hundreds of microns |
usually close-packed (distances
can be controlled by ligands
or polymer shells) |
up to 3 in. wafers |
(15,25,42) |
| BCML |
Si wafers, glass, ITO |
mainly Au (Pt, Ni are possible but difficult), spherical NPs, 5 to 15 nm |
from 30 to 300 nm |
up to 4 in. wafers |
(38−40) |
| spin-coating |
ITO |
mainly Au spheres and rods, but also CdSe NPs, 10–70 nm |
close-packed up to 60 nm |
several square centimeters |
(41) |