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. 2021 May 18;21(10):3518. doi: 10.3390/s21103518

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© 2021 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

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(a) Illustration of the Poole–Frenkel emission from the near-ohmic contact (CdTe/MoO_x) showing the injection I_i and generation I_g currents (arrows) in the energy diagram of the reverse-biased CdTe-based heterostructure (the Schottky contact is biased positively with respect to the near-ohmic one). (b) Comparison of the results calculated according to the Poole–Frenkel emission model by Equation (6) (solid lines) with the measured I-V characteristics of the reverse-biased Mo-MoO_x/p-CdTe/MoO_x-Mo, Ti-TiO_x/p-CdTe/MoO_x-Mo, and Ti-TiN/p-CdTe/MoO_x-Mo Schottky-diode detectors (symbols). The inset depicts the temperature dependence of the reverse currents in the heterostructures at V = −200 V.