Table 1.

Hall measurement results for the as-deposited and annealed Zr-doped Mg_xZn_1−xO films.

Temperature	Sheet Resistance Ohmic/sq	Mobility cm2/Vs	Carrier Concentration/ cm3
As-deposited	N.A.	N.A.	N.A.
700 °C/N2/60 s (RTA700°C)	1.59 × 105	0.881	−3.04 × 1018
800 °C/N2/60 s (RTA800°C)	5.38 × 104	1.61	−4.90 × 1018
900 °C/N2/60 s (RTA900°C)	2.45 × 103	3.70	−4.67 × 1019
1000 °C/N2/60 s (RTA1000°C)	1.30 × 103	4.46	−7.28 × 1019