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. 2021 Apr 8;125(15):8244–8252. doi: 10.1021/acs.jpcc.1c01505

Figure 2.

Figure 2

Panel (A): Normalized thickness profiles of SiO2 films grown by plasma ALD on lateral-high-aspect-ratio (LHAR) cavity structures at different temperature setpoints and a fixed plasma exposure time of 12 s per ALD cycle. Similar thickness profiles have been determined for plasma exposure times other than 12 s (at 100, 200, and 300 °C, see the Supporting Information), of which the scaled half-thickness penetration depths are plotted in panel (B).