Figure 5.

Determined surface recombination probabilities of oxygen radicals during plasma ALD of SiO₂ (orange circles) and TiO₂ (black squares) at different substrate temperatures (A) and plasma pressures (B). A plasma pressure of 50 mTorr was used in (A), while the substrate temperature in (B) was held at ∼180 °C (corresponding to a table temperature setpoint of 200 °C). For TiO₂, the value of r at a substrate temperature of ∼240 °C is estimated to be lower than 10^–5.