Figure 6.

Plasma exposure times needed to reach saturation for trenches with AR values of 200–1000, calculated using eq 10 and the values of r and t_50% determined for plasma ALD of SiO₂ at different substrate temperatures (A) and plasma pressures (B). The plasma pressure in (A) was kept at 50 mTorr and the substrate temperature in (B) at ∼180 °C. For each datapoint, the value of rAR² is specified by the grayscale bar. For ARs below ∼200, film growth is no longer recombination-limited (rAR² < 1), such that the saturation time is similar to that for a planar substrate and not significantly influenced by r.